Semiconductor memory device

ABSTRACT

A controller controls a memory including first and second strings. The first and second strings configure first and second string groups, respectively. In each string group, a set of memory cell transistors each from each string configures a unit. The controller is configured to: sequentially write, in the first string group, data in first units to which serially-coupled memory cell transistors respectively belong; sequentially write, in the second string group, data in first units to which serially-coupled memory cell transistors respectively belong; and sequentially write, in the first string group, data in second units to which serially-coupled memory cell transistors respectively belong.

This application is a continuation of and claims the benefit of priorityunder 35 U.S.C. § 120 from U.S. application Ser. No. 15/230,857 filedAug. 8, 2016, which is a continuation of U.S. application Ser. No.14/200,641 filed Mar. 7, 2014 (now U.S. Pat. No. 9,431,112 issued Aug.30, 2016), and claims the benefit of priority of U.S. ProvisionalApplication No. 61/861,456 filed Aug. 2, 2013, the entire contents ofeach of which are incorporated herein by reference.

FIELD

Embodiments of the present invention relate to a semiconductor memorydevice.

BACKGROUND

Three-dimensional structure memories with stacks of memory cells areknown.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a memory device according to a firstembodiment.

FIG. 2 is a block diagram of a memory according to the first embodiment.

FIG. 3 is a perspective view of a part of a memory cell array accordingto the first embodiment.

FIG. 4 is a circuit diagram of a part of the memory cell array accordingto the first embodiment.

FIG. 5 is a sectional view of a memory cell transistor according to thefirst embodiment.

FIG. 6 illustrates a first example of a possible write sequence.

FIG. 7 illustrates a second example of a possible write sequence.

FIG. 8 illustrates a write sequence in the memory device according tothe first embodiment.

FIG. 9 illustrates a second example of a write sequence in the memorydevice according to the first embodiment.

FIG. 10 illustrates a third example of a write sequence in the memorydevice according to the first embodiment.

FIG. 11 illustrates a fourth example of a write sequence in the memorydevice according to the first embodiment.

DETAILED DESCRIPTION

According to one embodiment, a controller controls a memory. The memorycomprises first strings coupled to respective bit lines and secondstrings respectively coupled to the bit lines. Each of the first andsecond strings comprises memory cell transistors coupled in series. Thefirst strings configure a first string group, and the second stringsconfigure a second string group. In each string group, a set of memorycell transistors each from each string configures a unit. The controlleris configured to write data per unit. The controller is furtherconfigured to: sequentially write, in the first string group, data infirst units to which serially-coupled memory cell transistorsrespectively belong; sequentially write, in the second string group,data in first units to which serially-coupled memory cell transistorsrespectively belong; and sequentially write, in the first string group,data in second units to which serially-coupled memory cell transistorsrespectively belong. The first units of the first string group aredifferent from the second units.

First Embodiment

Embodiments will now be described with reference to the figures.Components with substantially the same functionality and configurationwill be referred to with the same reference number and duplicatedescriptions will be made only when required. It should be noted thatthe figures are schematic. The following embodiments only illustratedevices and methods for embodying the technical idea of the embodiments,and the technical idea of the embodiments does not limit the material,form, structure, and arrangement, and the like, of components to thefollowing examples. The technical idea of the embodiments may bevariously changed in accordance with the scope of the claims.

Each functional block can be implemented as hardware, computer software,or a combination of the both. For this reason, in order to clearlyillustrate this interchangeability of hardware and software,descriptions will be made in terms of their functionality in general.Moreover, it is not essential that each functional block isdistinguished as the following examples. For example, some of thefunctions may be implemented by functional blocks different from thoseillustrated below. Furthermore, an illustrated functional block may bedivided into functional sub-blocks.

FIG. 1 is a block diagram of a memory device according to the firstembodiment. The memory device 1 includes a semiconductor memory 11 and amemory controller 12. The memory device 1 is an SD card, for example.The memory device 1 communicates with a host device 2.

The memory controller 12 receives, for example, write commands and readcommands from the host device 2, and accesses the memory 2 in accordancewith the commands. The memory controller 12 includes a host interface(I/F) 13, a central processing unit (CPU) 14, a read only memory (ROM)15, a random access memory (RAM) 16, a buffer 17, an error correctioncircuit (ECC circuit) 17 and a memory interface 19. They are coupled bya bus.

The host interface 13 allows the memory device 1 to be interfaced withthe host device 2. The CPU 14 manages operation of the whole memorydevice 1 in accordance with control programs. The ROM 15 storesfirmware, such as control programs used by the CPU 14. The RAM 16 isused as a work area for the CPU 14, and stores, for example, controlprograms and various kinds of tables. The buffer 17 temporarily storesdata.

The ECC circuit 18 includes an ECC encoder and an ECC decoder. The ECCencoder generates error correction codes for parities from received datain accordance with predetermined rules for producing error correctioncodes. The ECC decoder corrects an error or errors of data in accordancewith received data and its parities.

The memory interface 19 allows the memory controller 12 to be interfacedwith the memory 11.

FIG. 2 illustrates a block diagram of the memory 11 according to thefirst embodiment. As shown in FIG. 2, the memory 11 includes componentssuch as memory cell arrays 21, sense amplifiers 22, page buffers 23, arow decoder 25, a data bus 26, a column decoder 27, a serial accesscontroller 28, an I/O interface 31, a CG driver 32, a voltage generator33, a sequencer (or controller) 34, a command user interface 35, anoscillator 36 and SG drivers 37. The memory 11 corresponds to onesemiconductor chip, for example.

The memory 11 includes multiple memory cell arrays 21. FIG. 1illustrates two memory cell arrays 21; however the memory 11 may includethree or more memory cell arrays 21. Each memory cell array 21 includesmemory blocks, which may be simply referred to as blocks hereinafter.Each block has strings. Each string includes serially-coupled memorycell transistors and two select gate transistors at both ends thereof.Multiple strings are coupled to a bit line. Specific multiple memorycell transistors share a word line. Memory cell transistors which sharea word line configure a physical unit. The memory space of one physicalunit configures one or more pages. Data is read per page and erased perblock. When the memory 11 is configured to store data of two or morebits per memory cell, two or more pages are assigned to the memory spaceof one physical unit. In this case, a write may be executed per page inone physical unit, or together in some or all pages in one physicalunit. In order to encompass any scenario, the following description willbe made with a physical unit used as a write unit. The memory cell array21 has a three-dimensional structure, which will be described later indetail.

A set of the sense amplifier 22, page buffer 23, and row decoder 25 isprovided for each memory cell array 21. Each sense amplifier 22 includessense amplifier units coupled to respective bit lines, and senses andamplifies the potential on the bit lines. Each page buffer 23 receives acolumn address, reads data from the specified memory cell transistors inaccordance with the column address, temporarily stores the read data,and outputs it to the data bus 26, during a read. Each page buffer 23receives data from outside the memory 11 through the data bus 26 inaccordance with the column address and temporarily stores the receiveddata during a write. The column address is supplied by the columndecoder 27.

The data bus 26 is coupled to the serial access controller 28. Theserial access controller 28 is coupled to the I/O interface 31. The I/Ointerface 31 includes signal terminals, communicates with the memoryinterface 19 of the memory controller 12, and allows the memory 11 to beinterfaced with the memory controller 12. The serial access controller28 performs control including translation between a parallel signal onthe data bus 26 and a serial signal flowing through the I/O interface31.

Each row decoder 25 receives a block address from the sequencer 34 andselects a block in accordance with the received block address.Specifically, each row decoder 25 is coupled to the CG driver 32, andcouples outputs of the CG driver 32 to a selected block. The CG driver32 receives voltages from the voltage generator 33, and, in accordancewith control by the sequencer 34, generates voltages required forvarious operations of the memory 11 such as a read, write, and erase.The CG driver 32 is shared by the planes. The voltages output from theCG driver 32 are applied to the word lines.

An SG driver 37 is provided for each plane. Each SG driver 37 receives astring address from the sequencer 34, and selects a string in accordancewith the received string address. Specifically, each SG driver 37receives voltages from the voltage generator 33, and outputs thevoltages only for a selected string. The voltages output from the SGdriver 37 are applied to select gate lines (or gate electrodes of selectgate transistors).

The voltage generator 33 also provides the sense amplifier 22 withvoltages required for its operation. The sequencer 34 receives signals,such as a command and an address, from the command user interface 35,and operates in accordance with a clock from the oscillator 36. Thesequencer 34 controls various components (functional blocks) in thememory 11 in accordance with the received signal. For example, thesequencer 34 controls the column decoder 27, CG driver 32, voltagegenerator 33 and SG drivers 37 in accordance with the received signals,such as the command and address. Moreover, the sequencer 34 outputs theaforementioned block address and string address in accordance with thereceived signals, such as the command and address. The command userinterface 35 receives a control signal via the I/O interface 31. Thecommand user interface 35 decodes the received control signal, andobtains commands and addresses, and the like.

The memory 11 may be configured to store data of two or more bits in onememory cell.

The memory cell array 21 has components and connections illustrated inFIGS. 3 and 4. FIG. 3 is a perspective view of the memory cell arrayaccording to the first embodiment. FIG. 4 is a circuit diagram of a part(i.e., two physical blocks MB) of the memory cell array according to thefirst embodiment. As illustrated in FIGS. 3 and 4, the memory cell array21 has bit lines BL, source (cell source) lines SL, and physical blocksMB. The source lines SL extend along the row direction. The bit lines BLextend along the column direction. The row and column directions crosseach other at right angles. The physical blocks MB are in a line alongthe column direction at predetermined intervals. In each physical blockMB, i+1 (i being 11, for example) strings STR are coupled to one bitline BL.

A string STR has a memory string MS, a source-side select gatetransistor SSTr, and a drain-side select gate transistor SDTr. Memorystrings MS are located above a substrate sub along the stack direction.A memory string MS includes n+1 memory cell transistors (an example ofn=15 is illustrated and described) MTr0 to MTr15 and a back gatetransistor BTr which are serially coupled. When reference numerals witha subscript (for example, cell transistors Mtr) do not need to bedistinguished from each other, a reference numeral without the subscriptis used, and this refers to all reference numerals with subscripts. Thecell transistors MTr0 to MTr7 are located in the described order towardthe substrate sub along the stack direction. The cell transistors MTr8to MTr15 are located in the described order away from the substrate subalong the stack direction. The cell transistors MTr include asemiconductor pillar SP, an insulator on the surface of thesemiconductor pillar SP, and respective word lines (or control gates) WLas will be described in detail later. A back gate transistor BTr iscoupled between bottom cell transistors MTr7 and MTr8.

The select gate transistors SSTr and SDTr are located above top celltransistors MTr0 and MTr15 along the stack direction, respectively. Thedrain of a transistor SSTr is coupled to a source of a cell transistorMTr0. The source of a transistor SDTr is coupled to a drain of a celltransistor MTr15. The source of a transistor SSTr is coupled to thesource line SL. The drain of a transistor SDTr is coupled to a bit lineBL.

Strings located in a line along the row direction configure a stringgroup STRG. For example, all strings located in a line along the rowdirection and respectively coupled to all bit lines BL configure astring group STRG. In each string group STRG, the strings have theirrespective gates of the cell transistors MTr0 commonly coupled to theword line WL0. Similarly, in each string group STRG, the strings havetheir respective gates of cell transistors MtrX commonly coupled to aword line WLX. The word lines WL extend along the row direction.Respective gates of the back gate transistors BTr are commonly coupledto a back gate line BG.

In each string group STRG, the strings STR have their respective gatesof the transistors SDTr commonly coupled to a drain-side select gateline SGDL. In each string group STRG, the strings STR have theirrespective drains of the respective transistors SDTr coupled torespective bit lines BL. The select gate lines SGDL extend along the rowdirection. The string groups STRG0 to STRGi are provided with selectgate lines SGDL0 to SGDLi, respectively.

In each string group STRG, the strings STR have their respective gatesof the transistors SSTr commonly coupled to a source-side select gateline SGSL. Respective sources of transistors SSTr from two strings STRlocated in a line along the column direction are coupled to the samesource line SL. In each string group STRG, the strings STR have theirrespective sources of the transistors SSTr coupled to the same sourcelines SL. The select gate lines SGSL and source line SL extend along therow direction. The string groups STRG0 to STRGi are provided with selectgate lines SGSL0 to SGSLi, respectively.

Cell transistors of strings which are in one string group STRG andcoupled to the same word line WL configure a physical unit PU.

In each block MB, the word lines of the same number from differentstrings are coupled to each other. Specifically, word lines WL0 of allstrings in one block MB are coupled to each other, and word lines WLXare coupled to each other, for example.

For access to a cell transistor MTr, one block MB is selected and onestring group STRG is selected. For selecting one block, a signal toselect a block MB is output to only a block MB specified by a blockaddress signal. With such a block select signal, in the selected blockMB, the word lines WL and select gate lines SGSL and SGDL are coupled todrivers.

Furthermore, for selecting one string group STRG, select transistorsSSTr and SDTr only in a selected string group STRG receive voltages forthe purpose of selection. In unselected string groups STRG,select-transistors SSTr and SDTr receive voltages for the purpose ofnon-selection. The voltages for selection depend on operations such asread and write. The voltages for non-selection also depend on operationssuch as read and write.

Each cell transistor MTr has a structure illustrated in FIG. 5, forexample. FIG. 5 is a sectional view of a cell transistor according tothe first embodiment. The word lines (or gates) WL are made ofpolysilicon or a polycide, for example. A hole is formed through theword lines WL and insulators therebetween. On the surface of the hole,insulator IN2 is formed, and the semiconductor pillar SP is formed inthe hole. The semiconductor pillars SP extend along the stack direction,are arranged in a matrix along a plane formed of the row and columndirections, and are made of an impurity-doped semiconductor such assilicon.

The insulator IN2 includes a tunnel insulator IN2 a, a charge storagelayer IN2 b, and an inter-electrode insulator IN2 c. The tunnelinsulator IN2 a comprises silicon oxide (SiO₂), for example. The chargestorage film IN2 b is on the tunnel insulator IN2 a. The electric chargeinsulator IN2 b stores electrical charge, and comprises silicon nitride(SiN), for example. The inter-electrode insulator IN2 c is on the chargestorage layer IN2 b. The inter electrode insulator IN2 c comprisessilicon oxide, for example. A cell current flowing through thesemiconductor pillar SP varies based on the potential of a word line WLand the number of carriers in the charge storage layer IN2 b, which isutilized by the cell transistor MTr to store data in a nonvolatilemanner.

As a write to one block MB in the memory 11 with components andconnections as in FIGS. 3 to 5, the following two kinds of methods aregenerally possible. FIGS. 6 and 7 illustrate first and second examplesof possible write sequences, respectively. FIGS. 6 and 7 both illustratean example with one memory string MS including forty-eight memory celltransistors MTr and one block MB including twelve string groups STRG0 toSTRG11. In the FIG. 6 example, a write to one physical unit PU per onestring group STRG is repeated to all string groups STRG in one block MB,and such a write set is repeated to other physical units PU.Specifically, a write to a physical unit PU formed by memory celltransistors MTr coupled to its word line WL0 (referred to as a physicalunit PU of the word line WL hereinafter) is repeated in ascending orderof strings STRG, and such a write set is repeated from the physical unitof word line WL1 in ascending order of the word lines. Such a writemethod is referred to as a word-line order write herein.

In contrast, in the example of FIG. 7, writes conclude for every stringSTRG. Specifically, in each string STRG, a write is repeated inascending order from the physical unit PU of the word line WL0 towardthat of the word line WL47, and this write set is repeated in ascendingorder from the string STRG0 toward STRG11. Such a write method isreferred to as a string-group order write herein.

The word-line order write is said to be robust against influences from awrite disturb and to maintain the quality of written data. The word-lineorder write, however, has the following problems. As described above,the ECC circuit 18 calculates codes for correcting errors of data to bewritten (or write data) into the memory 11 from outside the memorydevice 1. In the word-line order write, an error correction code will becalculated in accordance with write data which will be stored inphysical units PU of all word lines WL assigned the same number in oneblock MB. When such calculation of error correction code is executedwith cross-interleave methods such as the cross-interleave Reed-Solomoncode method applied, it requires the RAM 16 to have a large capacity.This is because the same-numbered word lines WL in one block are coupledto each other and a defect in one word line WL influences all stringgroups STRG in that block MB, and therefore it is necessary to assumethe size of whole data in word-line-sharing physical units PU to be anerror burst. Such a case in turn requires a large-size correction codefor error correction.

In contrast, in the string-group order write, an error correction codewill be calculated from write data which will be stored in all physicalunits PU in one string group STRG. Such a calculation of code requiresthe RAM 16 with a small capacity. It is because influence of a defect ina particular word line WL only extends, at the farthest, to the adjacentword lines WL are restrictive, and therefore can be easily correctedwith data in physical units of other word lines WL. The string-grouporder write, however, produces a larger write disturb than the word-lineorder write, and therefore may deteriorate the quality of written data.Thus, any write has a trade-off relation between the data quality andrequired RAM size.

FIG. 8 illustrates a write sequence in the memory device according tothe first embodiment, and illustrates a sectional view of one block MB.FIG. 8 illustrates an example with one memory string MS includingforty-eight memory cell transistors MTr. The memory controller 12 isconfigured so that it can execute the write sequence as illustrated inFIG. 8 and described as follows. Specifically, the memory controller 12stores program which, when executed, causes the CPU 14 to execute thefollowing operations, in ROM 15, for example.

In the following description, in each string group, the physical unit PUof word line WL0 is referred to as physical-unit PU0. Similarly, in eachstring group, the respective physical units PU of word lines WL1 to WL47are referred to as physical units PU1 to PU47, respectively.

When the memory controller 12 receives a write command from the hostdevice 2, it writes write data in the memory 11 in accordance with thefollowing sequence. Specifically, the memory controller 12 first writesdata in physical units PU of a predetermined number (to be described indetail later) of the smallest-numbered string STRG0 in ascending orderof the numbers of the physical units PU including the smallest-numberedphysical unit PU0. More specifically, the string group STRG0 is selectedfor writes, and word lines of the predetermined number from the wordline WL0 are sequentially selected for writes. Such physical units PUsequentially written in one string group STRG are referred to as aphysical-unit set PUS. A physical-unit set PUS includes at least twophysical units PU, and includes four physical units PU, for example.With the example of four, the physical unit set PUS0 including thesmallest-numbered physical unit PU0 includes physical units PU0 to PU3.In FIG. 8 and following figures, each physical-unit set PUS isillustrated as a set of physical units PU of word lines WL surrounded bya dashed line.

To the data to be written in the physical unit set PUS0, an errorcorrection code generated by the ECC circuit 18 is added. The ECCcircuit 18 follows the control by the control program which manages theoperation of the whole memory controller 12 (or the CPU 14 operating inaccordance with the control program) to generate a set of write data anderror correction code to correct errors therein for each physical unitset PUS. Specifically, the memory controller 12 prepares data input tothe ECC circuit 18 (or ECC encoder input) so that the size of the datawith an error correction code added has a size smaller than or equal tothat of the physical unit PUS. Then, in accordance with the ECC encoderinput of such a size, the ECC circuit 18 generates an error correctioncode, and outputs the set of the ECC encoder input and error correctioncode (or ECC encoder output). The memory controller 12 then writes theobtained ECC encoder output in the physical unit set PUS0 in ascendingorder of the numbers of its physical units PU. Generation of the errorcorrection code for the data to be written in the physical unit set PUS0requires a RAM size smaller than would be necessary to generate an errorcorrection code in the word-line order write.

The memory controller 12 then repeats a similar write executed to thestring group STRG0 to the string group STRG1, which has the secondsmallest number. Specifically, the memory controller 12 writes an ECCencoder output of the size smaller than or equal to that of the physicalunit set PUS in the physical unit set PUS0 of the string group STRG1,which are specifically physical units PU0 to PU3, in ascending order ofthe numbers of the physical units PU.

Furthermore, the memory controller 12 repeats the write executed to thestring groups STRG0 or STRG1 to remaining string groups STRG in oneblock MB in ascending order of the numbers of the string groups STRG.Specifically, the memory controller 12 writes ECC encoder outputs in thephysical-unit sets PUS0 (physical units PU0 to PU3) in order from thestring group STRG2 toward the largest-numbered string group (or, stringgroup STRG 11 in the current example).

Thus, the memory controller 12 first repeats writes to thesmallest-numbered physical unit sets PUS0 while traversing all stringgroups STRG in one block MB.

Then, the memory controller 12 similarly repeats writes to the physicalunit sets PUS1 while traversing all string groups STRG in one block MBin ascending order of the numbers of the string groups STRG. Thephysical unit set PUS1 differs from the physical unit set PUS0. Thephysical unit set PUS1 typically succeeds the physical unit set PUS0.Specifically, the physical unit set PUS1 is a set of consecutivephysical units PU of the predetermined number succeeding thelargest-numbered physical unit PU of the physical unit PUS0. Forexample, the physical unit set PUS1 includes as many physical units PUas in the physical-unit set PUS0. Following the ongoing context, thephysical unit PUS1 includes physical units PU4 to PU7. Writes in thephysical-unit set PUS1 occur in ascending order of the numbers ofphysical units PU.

Similarly, the memory controller 12 also repeats writes to one physicalunit set PUS per one string group STRG while traversing all stringgroups STRG in one block MB, to the remaining physical unit sets PUS.Specifically, all physical units PU in each string group STRG aredivided into physical unit sets PUS, and the writes to one physical unitset per string group STRG are repeated while traversing string groups inascending order of the numbers of the physical unit sets PUS. Eachphysical unit set PUS typically includes physical units PU of the samenumber. Thus, the writes to all physical units PU of all string groupsSTRG in one block finish.

A physical unit set PUS may include more or less than four physicalunits PU. For example, a physical unit set PUS includes eight physicalunits PU. FIG. 9 illustrates such an example, illustrates a secondexample of a write sequence in the memory device according to the firstembodiment, and illustrates a sectional view of one block MB. FIG. 9also illustrates an example of one memory string MS includingforty-eight memory cell transistors MTr.

As illustrated in FIG. 9, each physical unit set PUS includesconsecutive physical units PU respectively assigned two sequentialnumbers. The memory controller 12 repeats writes to physical unit setPUS0 including the physical units PU0 and PU1 while traversing allstring groups STRG in one block MB. Similarly, all physical units PU ineach string group STRG are divided into physical unit sets PUS includingtwo physical units, and the writes to one physical unit set per stringgroup STRG are repeated while traversing string groups in ascendingorder of the numbers of the physical unit sets PUS.

An ECC encoder input may extend over multiple planes and multiple chips.FIGS. 10 and 11 illustrate such examples, and illustrate third andfourth examples of a write sequence in the memory device according tothe first embodiment. FIGS. 10 and 11 only illustrate one block MB fromeach plane 21. In FIGS. 10 and 11, physical units which configure aphysical unit set PUS are illustrated shaded.

In the FIG. 10 example, the memory device 1 includes 0th to seventhmemories 11-0 to 11-7, and each memory 11 includes 0th to third planes21. As illustrated in FIG. 10, the memory controller 12 configures onephysical unit set PUS from four physical units PU respectively assignedfour sequential numbers from each of the 0th to third planes 21-0 to21-3 from each of the 0th to seventh memories 11-0 to 11-7.Specifically, one physical unit set PUS consists of physical units PU of4 (physical units per one string group)×4 (planes)×8 (memories)=128. Thememory controller 12 provides the ECC circuit 18 with an ECC encoderinput which includes data to be written in the memory 11 and the errorcorrection code and has a size that fits in 128 physical units PUS.Then, a set of the ECC encoder input and error correction code (or, ECCencoder output) of such a size is written in one physical unit set PUS.FIG. 10 illustrates an example where, of the physical-unit sets PUS, theerror correction code is written in the physical units PU2 from each ofthe second and third planes 21-2 and 21-3 of the seventh memory 11-7.Thus, the physical unit set PUS extending over multiple planes 21 andmultiple memories is used in order for data to be written as describedwith reference to FIG. 8. Specifically, a write to one physical unit setper one string group is repeated in ascending order of the numbers ofthe physical unit sets PUS while traversing the string groups STRG.

The writes can be executed in any manner so long as data is written inthe physical units PU in ascending order of their numbers as describedwith reference to FIG. 8 in each plane 21. Specifically, in each memory11, the writes to the physical unit sets PUS may be executed inindependent planes 21 sequentially, or to all or some planes 21 inparallel. Furthermore, the writes to the physical-unit sets PUS may beexecuted in independent memories 11 sequentially, or to all or somememories 11 in parallel.

In the FIG. 11 example, the memory device 1 includes 0th to thirdmemories 11-0 to 11-3, and each memory 11 includes the 0th to thirdplanes 21-0 to 21-3. As illustrated in FIG. 11, the memory controller 12configures one physical unit set PUS from eight physical units PU withthe numbers of sequential eight from each of the 0th to third planes21-0 to 21-3 from each of the 0th to third memories 11-0 to 11-3.Specifically, one physical unit set PUS consists of physical units PU of8 (physical units per one string group)×4 (planes)×4 (memories)=128. Thespecific write is the same as that in FIG. 10 with the only differencebeing in the combination of the physical units which configure aphysical unit set.

The memory controller 12 changes the number of the physical units PU perone plane 21 in accordance with the number of the memories 11 and thenumber of the planes 21 to control so that the size of one physical unitset PUS is constant as in the examples of FIGS. 10 and 11. In the casesof FIGS. 10 and 11, each memory 11 commonly includes four planes 21while the memory controller 12 controls eight memories 11 for the FIG.10 case and four memories 11 for the FIG. 11 case. Then, the memorycontroller 12 includes four physical units PU per one string group STRGin one physical unit PUS in the FIG. 10 example and eight physical unitsPU in the FIG. 11 example in order for one physical unit PUS to include128 physical units PU in any of the cases in FIGS. 10 and 11.

As described above, the memory device according to the first embodimentrepeats a write to a physical unit set PUS per string group STRG whiletraversing the string groups STRG, and repeats such a write set to theremaining physical unit sets PUS. A set of write data and its errorcorrection code is generated in units of physical unit sets PUS. Forthis reason, the RAM 16 is released whenever data to be written in thephysical unit set PUS (including the error correction code) isgenerated. Therefore, the size of the RAM 16 required for generating theerror correction code is smaller than that in the word-line order write(see, FIG. 6). This leads to a decrease in the manufacturing cost of thememory device 1. Moreover, a physical-unit set PUS includes fewerphysical units PU than all the physical units PU included in one stringgroup STRG. Therefore, data to be written in the memory 11 is robustagainst the influence of write disturb.

Second Embodiment

In a second embodiment, the memory 11 replaces the memory controller 12to execute a particular write sequence.

The memory according to the second embodiment has the same configuration(or, components and connections) as in the first embodiment although thememory 11 of the second embodiment is configured to execute thefollowing operations. Specifically, the sequencer 34 controls relatedcomponents in the memory 11 such as the column decoder 27, CG driver 32and SG driver 37 to execute the following operations.

The memory 11 has a normal write mode and a mode to write in aparticular sequence. In the mode to write in a particular sequence, thememory 11 executes the write sequence described for the first embodimentwith reference to FIGS. 8 and 9. Specifically, in the specific sequencewrite mode, the memory 11, when instructed to write that will end upwith data writes to two or more physical units PU, repeats the write tothe same-numbered physical unit set PUS while traversing the stringgroups, and repeats such a write set to remaining physical unit sets PUSas described with reference to FIGS. 8 and 9. For example, assume thatthe memory 11 receives data write instructions which lead to data writesto two or more physical units PU (for example, data writes to one blockMB or a part of a block MB). In response to such instructions, thememory controller 12 does not instruct or manage areas to which the datawill be written per physical unit PU, and therefore the memory can writein physical units PU selected by itself. In a typical example, thememory controller 12 instructs writes to one block MB in the memory 11,and does not specify areas in the block MB in which the data will bewritten, but selection of areas to which the data will be written isleft to the memory 11. In such a case, the memory 11 in the specificsequence write mode autonomously executes the writes of the firstembodiment.

In the normal write mode, the memory 11 writes data in the addresseswhich the memory controller specifies to write data.

The selection of the mode is implemented by a command, for example. Thememory 11 has multiple modes, including the aforementioned normal writemode and specific sequence write mode. Thus, each mode is specified bythe memory controller 12.

As described above, the memory 11 according to the second embodimentrepeats a write to a physical unit set PUS per string group STRG whiletraversing the string groups STRG, and repeats such a write set toremaining physical unit sets PUS as in the first embodiment. This canproduce the same advantages as those of the first embodiment.Furthermore, the memory 11 of the second embodiment in the specificsequence write mode writes data in the specific sequence as in the firstembodiment without instructions from the memory controller 12. This canreduce the load of the process carried out by the memory controller 12,and increase the flexibility of use of the memory 11.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A memory system comprising: a nonvolatilesemiconductor memory device comprising: first and second strings, eachof the first and second strings including a plurality of memory cellsand a select transistor, the plurality of memory cells being connectedin series, the select transistor being electrically connected in serieswith the memory cells, the memory cells including a first memory cell, asecond memory cell, a third memory cell, and a fourth memory cell; a bitline electrically connected to the first and the second strings; a firstselect gate line electrically connected to a gate of the selecttransistor of the first string; a second select gate line electricallyconnected to a gate of the select transistor of the second string; afirst word line electrically connected to gates of the first memory cellof the first string and the first memory cell of the second string; asecond word line electrically connected to gates of the second memorycell of the first string and the second memory cell of the secondstring, a third word line electrically connected to gates of the thirdmemory cell of the first string and the third memory cell of the secondstring; and a fourth word line electrically connected to gates of thefourth memory cell of the first string and the fourth memory cell of thesecond string, and a controller configured to perform a first writeprocess, to perform a second write process after the first writeprocess, to perform a third write process after the second writeprocess, and to perform a fourth write process after the third writeprocess, wherein the first write process includes writing data in thefirst memory cell of the first string and writing data in the secondmemory cell of the first string after the writing in the first memorycell of the first string, the second write process includes writing datain the first memory cell of the second string and writing data in thesecond memory cell of the second string after the writing in the firstmemory cell of the second string, the third write process includeswriting data in the third memory cell of the first string and writingdata in the fourth memory cell of the first string after the writing inthe third memory cell of the first string, and the fourth write processincludes writing data in the third memory cell of the second string andwriting data in the fourth memory cell of the second string after thewriting in the third memory cell of the second string.
 2. The memorysystem according to claim 1, wherein: a voltage for selection is appliedto the first select gate line when the data are written in the firstmemory cell of the first string in the first write process, the voltagefor selection is applied to the second select gate line when the dataare written in the first memory cell of the second string in the secondwrite process, the voltage for selection is applied to the first selectgate line when the data are written in the second memory cell of thefirst string in the first write process, the voltage for selection isapplied to the second select gate line when the data are written in thesecond memory cell of the second string in the second write process, thevoltage for selection is applied to the first select gate line when thedata are written in the third memory cell of the first string in thethird write process, the voltage for selection is applied to the secondselect gate line when the data are written in the third memory cell ofthe second string in the fourth write process, the voltage for selectionis applied to the first select gate line when the data are written inthe fourth memory cell of the first string in the third write process,and the voltage for selection is applied to the second select gate linewhen the data are written in the fourth memory cell of the second stringin the fourth write process.
 3. The memory system according to claim 1,wherein: the first memory cell of the first string is between the selecttransistor of the first string and the second memory cell of the firststring, the first memory cell of the first string is between the selecttransistor of the first string and the third memory cell of the firststring, the first memory cell of the second string is between the selecttransistor of the second string and the second memory cell of the secondstring, and the first memory cell of the second string is between theselect transistor of the second string and the third memory cell of thesecond string.
 4. The memory system according to claim 1, wherein: thefirst to fourth word lines are located away from the bit line along astack direction in the nonvolatile semiconductor memory device, thefirst word line is closer to the bit line than the second word line, thethird word line is closer to the bit line than the fourth word line, andthe first word line is closer to the bit line than the third word line.5. The memory system according to claim 1, wherein: the second word lineis adjacent to the first word line, the third word line is adjacent tothe second word line, and the fourth word line is adjacent to the thirdword line.
 6. The memory system according to claim 1, wherein: thenonvolatile semiconductor memory device comprises a block as a unit ofdata erasing, and the block comprises the first and second strings. 7.The memory system according to claim 1, wherein: each of the first tofourth memory cells is capable of storing data of two bits.
 8. A memorysystem comprising: a nonvolatile semiconductor memory device comprising:first to n-th (n is an integer of 2 or more) strings, each of the firstto n-th strings including a plurality of memory cells and a selecttransistor, the plurality of memory cells being connected in series, theselect transistor being electrically connected in series with the memorycells, the memory cells including a first memory cell, a second memorycell, a third memory cell, and a fourth memory cell; a bit lineelectrically connected to the first to n-th strings; first to n-thselect gate lines, the k-th (k is an integer that satisfies 7≤k≤n)select gate line electrically connected to a gate of the selecttransistor of the k-th string; a first word line electrically connectedto gates of the first memory cells of the first to n-th strings; asecond word line electrically connected to gates of the second memorycells of the first to n-th strings, a third word line electricallyconnected to gates of the third memory cells of the first to n-thstrings; and a fourth word line electrically connected to gates of thefourth memory cells of the first to n-th strings, and a controllerconfigured to perform first to n-th write processes and to perform(n+1)-th to 2n-th write processes after the first to n-th writeprocesses, wherein the controller performs the (i+1)-th (i is an integerthat satisfies 1≤i≤(n−1)) write process after the i-th write process,the controller performs the (j+1)-th (j is an integer that satisfies(n+1)≤j≤(2n−1)) write process after the j-th write process, the k-thwrite process includes writing data in the first memory cell of the k-thstring and writing data in the second memory cell of the k-th stringafter the writing in the first memory cell of the k-th string, and the(n+k)-th write process includes writing data in the third memory cell ofthe k-th string and writing data in the fourth memory cell of the k-thstring after the writing in the third memory cell of the k-th string. 9.The memory system according to claim 8, wherein: a voltage for selectionis applied to the k-th select gate line when the data are written in thefirst memory cell of the k-th string in the k-th write process, thevoltage for selection is applied to the k-th select gate line when thedata are written in the second memory cell of the k-th string in thek-th write process, the voltage for selection is applied to the k-thselect gate line when the data are written in the third memory cell ofthe k-th string in the (n+k)-th write process, and the voltage forselection is applied to the k-th select gate line when the data arewritten in the fourth memory cell of the k-th string in the (n+k)-thwrite process.
 10. The memory system according to claim 8, wherein: thefirst memory cell of the k-th string is between the select transistor ofthe k-th string and the second memory cell of the k-th string, and thefirst memory cell of the k-th string is between the select transistor ofthe k-th string and the third memory cell of the k-th string.
 11. Thememory system according to claim 8, wherein: the first to fourth wordlines are located away from the bit line along a stack direction in thenonvolatile semiconductor memory device, the first word line is closerto the bit line than the second word line, the third word line is closerto the bit line than the fourth word line, and the first word line iscloser to the bit line than the third word line.
 12. The memory systemaccording to claim 11, wherein: the second word line is adjacent to thefirst word line, the third word line is adjacent to the second wordline, and the fourth word line is adjacent to the third word line. 13.The memory system according to claim 8, wherein: the nonvolatilesemiconductor memory device comprises a block as a unit of data erasing,and the block comprises the first to n-th strings.
 14. The memory systemaccording to claim 8, wherein: each of the first to fourth memory cellsis capable of storing data of two bits.
 15. A memory system comprising:a nonvolatile semiconductor memory device comprising: first and secondstrings, each of the first and second strings including a plurality ofmemory cells and a select transistor, the plurality of memory cellsbeing connected in series, the select transistor being electricallyconnected in series with the memory cells, the memory cells including afirst memory cell, a second memory cell, a third memory cell, and afourth memory cell; a bit line electrically connected to the first andthe second strings; a first select gate line electrically connected to agate of the select transistor of the first string; a second select gateline electrically connected to a gate of the select transistor of thesecond string; a first word line electrically connected to gates of thefirst memory cell of the first string and the first memory cell of thesecond string; a second word line electrically connected to gates of thesecond memory cell of the first string and the second memory cell of thesecond string, a third word line electrically connected to gates of thethird memory cell of the first string and the third memory cell of thesecond string; and a fourth word line electrically connected to gates ofthe fourth memory cell of the first string and the fourth memory cell ofthe second string, and a controller configured to apply a voltage to thefirst word line for writing data in the first memory cell of the firststring, to apply a voltage to the second word line for writing data inthe second memory cell of the first string after the applying of avoltage to the first word line for the write in the first memory cell ofthe first string, to apply a voltage to the first word line for writingdata in the first memory cell of the second string after the applying ofa voltage to the second word line for the write in the second memorycell of the first string, to apply a voltage to the second word line forwriting data in the second memory cell of the second string after theapplying of a voltage to the first word line for the write in the firstmemory cell of the second string, to apply a voltage to the third wordline for writing data in the third memory cell of the first string afterthe applying of a voltage to the second word line for the write in thesecond memory cell of the second string, to apply a voltage to thefourth word line for writing data in the fourth memory cell of the firststring after the applying of a voltage to the third word line for thewrite in the third memory cell of the first string, to apply a voltageto the third word line for writing data in the third memory cell of thesecond string after the applying of a voltage to the fourth word linefor the writing data in the fourth memory cell of the first string, andto apply a voltage to the fourth word line for writing data in thefourth memory cell of the second string after the applying of a voltageto the third word line for the write in the third memory cell of thesecond string.
 16. The memory system according to claim 15, wherein: avoltage for selection is applied to the first select gate line when thevoltage for writing data in the first memory cell of the first string isapplied to the first word line, the voltage for selection is applied tothe second select gate line when the voltage for writing data in thefirst memory cell of the second string is applied to the first wordline, the voltage for selection is applied to the first select gate linewhen the voltage for writing data in the second memory cell of the firststring is applied to the second word line, the voltage for selection isapplied to the second select gate line when the voltage for writing datain the second memory cell of the second string is applied to the secondword line, the voltage for selection is applied to the first select gateline when the voltage for writing data in the third memory cell of thefirst string is applied to the third word line, the voltage forselection is applied to the second select gate line when the voltage forwriting data in the third memory cell of the second string is applied tothe third word line, the voltage for selection is applied to the firstselect gate line when the voltage for writing data in the fourth memorycell of the first string is applied to the fourth word line, and thevoltage for selection is applied to the second select gate line when thevoltage for writing data in the fourth memory cell of the second stringis applied to the fourth word line.
 17. The memory system according toclaim 15, wherein: the first memory cell of the first string is betweenthe select transistor of the first string and the second memory cell ofthe first string, the first memory cell of the first string is betweenthe select transistor of the first string and the third memory cell ofthe first string, the first memory cell of the second string is betweenthe select transistor of the second string and the second memory cell ofthe second string, and the first memory cell of the second string isbetween the select transistor of the second string and the third memorycell of the second string.
 18. The memory system according to claim 16,wherein: the first to fourth word lines are located away from the bitline along a stack direction in the nonvolatile semiconductor memorydevice, the first word line is closer to the bit line than the secondword line, the third word line is closer to the bit line than the fourthword line, and the first word line is closer to the bit line than thethird word line.
 19. The memory system according to claim 15, wherein:the second word line is adjacent to the first word line, the third wordline is adjacent to the second word line, and the fourth word line isadjacent to the third word line.
 20. The memory system according toclaim 15, wherein: the nonvolatile semiconductor memory device comprisesa block as a unit of data erasing, and the block comprises the first andsecond strings.